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GATE ECE Question Paper 2011 | GATE Previous Papers | GATE ECE Sample Paper 2011 | GATE Electronics & Communication Engg Paper

GATE ECE Sample Question Paper
1. Consider the following statements S1 and S2.
S1: The b of a bipolar transistor reduces if the base width is increased.
S2: The b of a bipolar transistor increases if the doping concentration in the base is increased. Which one of the following is correct?
A) S1 is FALSE and S2 is [...]

GATE ECE Question Paper 2011 | GATE Previous Papers | GATE ECE Sample Paper 2011 | GATE Electronics & Communication Engg Paper